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Au/Zn Contacts to p-InP: Electrical and Metallurgical Characteristics and the Relationship Between Them

Published online by Cambridge University Press:  25 February 2011

Victor G. Weizer ,
Navid S. Fatemi  and
Andras L. Korenyi-both
Victor G. Weizer
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
Navid S. Fatemi
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135 NYMA, Inc., Lewis Research Center Group, Brook Park, OH 44142
Andras L. Korenyi-both
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135 Calspan Corp., Cleveland, OH 44135
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Abstract

The metallurgical and electrical behavior of Au/Zn contacting metallization onp-type InP was investigated as a function of the Zn content in the metallization. It was found that ohmic behavior can be achieved with Zn concentrations as small as 0.05 atomic percent Zn. For Zn concentrations between 0.1 and 36 at.%, the contact resistivity ρc was found to be independent of the Zn content For low Zn concentrations the realization of ohmic behavior was found to require the growth of the compound Au2P3 at the metal-InP interface. The magnitude of ρc is shown to be very sensitive to the growth rate of the interfacial Au2P3 layer. The possibility of exploiting this sensitivity to provide low resistance contacts while avoiding the semiconductor structural damage that is normally attendant to contact formation is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 369
Copyright
Copyright © Materials Research Society 1994

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References

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