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Automation Features Used with the Halide-Cvd Technique at the AT&T-Microelectronics Production Plant in Reading, Pennsylvania

Published online by Cambridge University Press:  28 February 2011

Bruce J. Rhoades ,
Steven J. Travis  and
David G. Sands
Bruce J. Rhoades
Affiliation:
AT&T-Microelectronics, P.O. Box 13396, Reading, Pa. 19612-3396
Steven J. Travis
Affiliation:
AT&T-Microelectronics, P.O. Box 13396, Reading, Pa. 19612-3396
David G. Sands
Affiliation:
AT&T-Microelectronics, P.O. Box 13396, Reading, Pa. 19612-3396
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Abstract

The the Halide-CVD technique is used in both research and development as well as production at AT&T. The unique requirements of the production environment dictate that reactor designs include features to improve reproducibility and maintenance, as well as reduce operator intervention. Features incorporated in the Halide-CVD reactor at AT&T include microprocessor control of valves, mass flow controllers, and furnace temperature setpoints. The unique needs of a production facility, such as process reproducibility, and commonality with standard plant equipment and information systems, will be highlighted.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 231
Copyright
Copyright © Materials Research Society 1989

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