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Atomistic Simulation of Nanocrystalline Materials
Published online by Cambridge University Press: 15 February 2011
Abstract
Atomistic simulations show that high-energy grain boundaries in nanocrystalline copper and nanocrystalline silicon are highly disordered. In the case of silicon the structures of the grain boundaries are essentially indistinguishable from that of bulk amorphous silicon. Based on a free-energy argument, we suggest that below a critical grain size nanocrystalline materials should be unstable with respect to the amorphous phase.
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- Copyright © Materials Research Society 1996
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