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Atomically-Resolved Surface Photovoltage Probed by Optically-Excited Scanning Tunneling Microscopy
Published online by Cambridge University Press: 25 February 2011
Abstract
Scanning Tunneling Microscopy combined with optical excitation techniques is used to study non-equilibrium electronic properties of clean silicon surfaces with high spatial resolution. Tunneling potentiometry is performed to measure the excess carrier distributions via the surface photovoltage effect. Well-ordered regions of Si(111)-(7×7) show a uniform surface photovoltage effect, while strong decreases are observed near defects. The decreases in the photovoltage are attributed to an increase in the rate of recombination of electron-hole pairs in the vicinity of the defects.
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