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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

  • M Benamara (a1), A Rocher (a1), A Laporte (a2) (a3), G Sarrabayrouse (a2), L Lescouzères (a3), A PeyreLavigne (a3), M Fnaiech (a4) and A Claverie (a1)...

Abstract

The so-called Direct Wafer Bonding (DWB) technique opens new possibilities for the electronic industry but still suffers from the poor knowledge we have of the microstructure of these interfaces and hence of their electrical activity. In this work, we have extensively used Transmission Electron Microscopy techniques in plan-view and cross-section to identify the structure of the interfaces found between two bonded silicon wafers. The general structure of these interfaces is that of a perfect grain boundary and evidently depends on the misorientation between the two bonded wafers. A twist component in the range 0>θ>13˚ creates a square network of pure screw dislocation whereas an unavoidable tilt component (<0.5˚) is compensated by a periodic array of 60˚ dislocation lines perpendicular to the tilt direction. Therefore, the regularity of these networks can be disrupted by the presence of steps (of up to several nanometers) in the interface plane. Silicon oxide precipitates are seen heterogeneously distributed on the interface with preferential nucleation sites on the dislocations.

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1. Bengtsson, S., (1992) J. of Electronic Materials, 21 (8), 841862.
2. Laporte, A., Sarrabayrouse, G., Lescouzeres, L., PeyreLavigne, A., Benamara, M., Rocher, A. and Claverie, A., 1994, Proc. 6th Int. Symp. on Power Semi. Dev. & ICs, 293–296.
3. Engstrom, O., Bengtsson, S., Andersson, G. I., Andersson, M. O. and Jauhiainen, A., (1992) J. Electrochem. Soc., Vol. 139, No 12, 36383644.
4. Föll, H. and Ast, D., 1979, Phil. Mag. A 40 (5), 589610.
5. Benamara, M., Rocher, A., Laânab, L., Claverie, A., Laporte, A., Sarrabayrouse, G., Lescouzeres, L. and PeyreLavigne, A., 1994, CRAS Paris 318 (2) 14591464.
6. Gafiteanu, R., Chevacharoenkul, S., Gösele, U. M., Tan, T. Y., 1993, Microscopy of Semiconducting Materials 134, 87.
7. Carter, C. B., Föll, H.., Ast, D. G. and Sass, S. L., 1981, Phil. Mag. A 43 (5), 441.
8. Bollmann, W., 1970, Crystal Defects and Crystalline Interfaces (Editors: Springer-Verlag).
9. Kang, J.M., 1993, Ph. D. Thesis, University of Toulouse III.
10. Guan, D. Y. and Sass, S. L., 1973, Phil. Mag. A 27, 1211.
11 Benamara, M., Rocher, A., Laporte, A., Sarrabayrouse, G., Lescouzères, L. PeyreLavigne, A. and Claverie, A., 1995, Microscopy of Semiconducting Materials, in press.
12 Frank, F. C., 1954, Defects in Cristalline Solid, London, Physical Society.
13 Zhu, and Carter, C.B., 1990, Phil. Mag. A 62 (3), 319.

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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

  • M Benamara (a1), A Rocher (a1), A Laporte (a2) (a3), G Sarrabayrouse (a2), L Lescouzères (a3), A PeyreLavigne (a3), M Fnaiech (a4) and A Claverie (a1)...

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