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The atomic scale removal mechanism during chemomechanical polishing of Silicon: An atomic force microscopy study

  • Futoshi Katsuki (a1) and Junji Watanabe (a2)

Abstract

The pressure dependence of the microwear of an oxidized Si surface under aqueous electrolyte solutions has been investigated using an atomic force microscope with a single crystal Si tip. The removal ratio of Si tip to SiO2 surface is found to be highly sensitive to the contact pressure. We present a microscopic removal mechanism which is determined by an interplay of the diffusion of H2O in Si and SiO2.

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