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Atomic Layer Epitaxy of GaAs on Si by Mocvd

Published online by Cambridge University Press:  28 February 2011

N.H. Karam ,
V.E. Haven ,
S.M. Vernon ,
J.C. Tran  and
N.A. El-Masry
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
V.E. Haven
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
S.M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
J.C. Tran
Affiliation:
North Carolina State University, Materials Engineering Department, Raleigh, NC 27695
N.A. El-Masry
Affiliation:
North Carolina State University, Materials Engineering Department, Raleigh, NC 27695
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Abstract

Epitaxial GaAs films have been deposited on Si substrates using Atomic Layer Epitaxy (ALE) for the first time. This has been achieved in a SPI-MO CVD™ 450 reactor especially modified foroALE. After an initial high temperature bakeout, a nucleation layer 100-300 Å thick was deposited by ALE. Film growth was then resumed by conventional MOCVD to achieve the desired film thickness. The surface morphologies of the deposited films were found to be comparable to current state of the art conventional GaAs on Si films deposited by the two-step growth process in the same reactor.

Selective area epitaxy of GaAs on Si has also been achieved on Si02-coated and patterned Si wafers. The standard two-step deposition technique resulted in epitaxial growth in the patterned windows and poly-GaAs on the oxide mask, while ALE growth resulted in deposition only in the etched windows with no poly-growth on the oxide mask. We will report on the potential of this new deposition technique in producing high quality GaAs-on-Si films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 331
Copyright
Copyright © Materials Research Society 1989

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References

1.For a review see (a) “Heteroepitaxy on Si I,” Mater. Res. Soc. (MRS)67 (1986); (b) “Heteroepitaxy on Si II,” MRS 91(1987).Google Scholar
2.“Heteroepitaxy on Silicon Fundamentals, Structures, and Devices,” MRS 116(1988).Google Scholar
3. Chen, H.Z., Ghaffari, A., Wang, H., Morkoc, H., and Yariv, A., Opt. Lett. 12, 812 (1987).Google Scholar
4. Choi, H.-K., Mattia, J., Turner, G., Tsaur, B., IEEE EDL–9, 512(1988); G. Turner, H.K. Choi, J. Mattia, C. Chen, S. Eglash, and B. Tsaur, ref 2, p. 179.Google Scholar
5. Vernon, S.M., Tobin, S.P., Haven, V.E., Bajgar, C., Dixon, T.M., Al-Jasmin, M.M., Ahrenkiel, R.K., Emery, K.A., “Efficiency Improvements in GaAson-Si Solar Cells,” Proc. of the 20th IEEE PVSC, Las Vegas, September 1988, to be published.Google Scholar
6. Shaw, D., ref 1(a), p. 15.Google Scholar
7. Goodman, C. and Pessa, M.V., J. Appl. Phys. 60, R65 (1986).Google Scholar
8. Bedair, S.M., McDermott, B., Ide, Y., Tischler, M., Karam, N.H., and El-Masry, N., 4th Int. Conf. MOVPE, Japan, May(1988).Google Scholar
9. Karam, N.H., Liu, H., Yoshida, I., and Bedair, S.M., Appl. Phys. Lett. 53, 1144 (1988).Google Scholar
10. Watanabe, H. and Usui, A., Inst. of Phys. Conf., GaAs and Related Compounds, 83, 1 (1986); K. Mori, M. Yoshida, and A. Usui, Inst. of Phys. Conf., GaAs and Related Compounds, Crete, Greece (1987).Google Scholar
11. Karam, N.H., Haven, V.E., Vernon, S.M., and El-Masry, N., in preparation (1989).Google Scholar
12. Jones, S.H. and Lau, K.M., Electrochem. Soc. 134, 3149(1987); R. Azoulay, N. Boudma, J.C. Boulcy, and L. Dugrand, J. Cryst. Growth 55, 229 (1981).Google Scholar
13. Kamon, K., Takagishi, S., and Mori, H., J. Cryst. Growth 73, 73(1985); K. Kamon et al., J. Cryst. Growth 77, 297 (1986).Google Scholar