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Atomic Layer Controlled Substitutional Doping With Lithium in ZnSe

Published online by Cambridge University Press:  16 February 2011

Ziqiang Zhu
Affiliation:
Sumitomo Metal Mining Company, Ltd, Electronics Materials Laboratory, Suehiro-cho, Ohme-shi, Tokyo 198, Japan
Mitsuo Kawashima
Affiliation:
Sumitomo Metal Mining Company, Ltd, Electronics Materials Laboratory, Suehiro-cho, Ohme-shi, Tokyo 198, Japan
Takafumi Yao
Affiliation:
Hiroshima University, Department of Electrical Engineering, Higashi-Hiroshima 724, Japan
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Abstract

The detailed observation of dynamical behaviors of reflection high energy electron diffraction (RHEED) patterns during the adsorption processes of Li, Se and Zn is carried out. It is found that the RHEED intensity variation reflects the Li surface coverage during Li adsorption process on a Secovered surface. This fact enables one to control quantitatively the doping of Li “in situ”. A new method for atomic-layer controlled substitutional doping of ZnSe layers with lithium is proposed based on the RHEED investigations. The method allows the incorporation of Li dopants on Zn-sites of ZnSe by monitoring the RHEED patterns and intensities, and is expected to suppress the compensation by Li interstitials. Photoluminescence spectrum shows the growth of high quality p-type layers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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References

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