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Atomic Hydrogen Passivation of High Energy Hydrogen Implants

  • K. Srikanth (a1), J. Shenal (a1) and S. Ashok (a1)

Abstract

High-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

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Atomic Hydrogen Passivation of High Energy Hydrogen Implants

  • K. Srikanth (a1), J. Shenal (a1) and S. Ashok (a1)

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