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Atomic Abruptness and Smoothness at Heterointerfaces: Fact or Fiction?

Published online by Cambridge University Press:  26 February 2011

A. Ourmazd  and
Y. Kim
A. Ourmazd
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
Y. Kim
Affiliation:
AT&T Bell Laboratories, Holmdel, NJ 07733, USA.
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Abstract

It is now common to claim the fabrication of heterointerfaces, which are atomically flat over distances in the micron range. However, when chemical lattice imaging and digital pattern recognition are combined to examine quantitatively individual semiconductor heterointerfaces of the highest quality, substantial atomic scale roughness is observed. In this paper we review the application of chemical imaging and pattern recogntion techniques to the characterisation of heterointerfaces at near-atomic resolution, and discuss the possible ways the results can be combined with optical measurements to give an overall picture of interfacial roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 127
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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