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Atom Transport in Nickel by Displacement Cascades for Spatially Dependent Displacement Rate and Sink Strength

Published online by Cambridge University Press:  15 February 2011

H. Wollenberger ,
P. Fielitz ,
M.-P. Macht  and
V. Naundorf
H. Wollenberger
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
P. Fielitz
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
M.-P. Macht
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
V. Naundorf
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
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Abstract

Atom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths. By fitting the solution of a diffusion equation to the depth dependent measurements effective fractional production rates of freely migrating defects and effective sink strengths have been obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 379
Copyright
Copyright © Materials Research Society 1997

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