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Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Titanium Bromide And Ammonia

Published online by Cambridge University Press:  10 February 2011

Roy G. Gordon ,
Ross W. Frisbie ,
Joshua Musher  and
John Thornton
Roy G. Gordon
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138.
Ross W. Frisbie
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138.
Joshua Musher
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138.
John Thornton
Affiliation:
Department of Chemistry, Harvard University, Cambridge, MA 02138.
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Abstract

Titanium nitride films were formed by chemical vapor deposition from titanium tetrabromide and ammonia at atmospheric pressure and substrate temperatures from about 400 to 600 °C. Although titanium tetrabromide is a highly hygroscopic solid at room temperature, it can be handled conveniently as a very concentrated liquid solution (85 weight percent) in bromine as a solvent. This solution can be vaporized by a direct liquid injection system. Alternatively, the solution can be pumped into a bubbler, from which the bromine solvent is then removed by fractional distillation. Rutherford Backscattering Spectroscopy was used to determine that the bromine content of TiN deposited at 500°C was about one atomic per cent. Growth rates were about 17 nm/min, and electrical resistivity was found to be about 200 μΩ-cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 283
Copyright
Copyright © Materials Research Society 1996

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References

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