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Asymmetric Relaxation in Epitaxial Layers of III-V Compounds
Published online by Cambridge University Press: 25 February 2011
Abstract
Relaxation in a 3μm epitaxial layer of GaAsSb on GaAs, a 1μm layer of InGaAs on InP and an InGaAs superlattice on InP has been investigated by double crystal X-ray diffractometry and double crystal X-ray synchrotron topography and found to be asymmetric. The origins of assymetric relaxation are discussed and the sensitivity of diffractometry and topography to the detection of layer relaxation compared.
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- Copyright © Materials Research Society 1991
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