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Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

Published online by Cambridge University Press:  01 February 2011

Ahila Krishnamoorthy ,
N.Y. Huang  and
Shu-Yunn Chong
Ahila Krishnamoorthy
Affiliation:
Semiconductor Process Technologies – Advanced Interconnect, Institute of Microelectronics, 11 Science Park Road, Singapore 117687
N.Y. Huang
Affiliation:
Semiconductor Process Technologies – Advanced Interconnect, Institute of Microelectronics, 11 Science Park Road, Singapore 117687
Shu-Yunn Chong
Affiliation:
Semiconductor Process Technologies – Advanced Interconnect, Institute of Microelectronics, 11 Science Park Road, Singapore 117687
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Abstract

Black DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E2.9
Copyright
Copyright © Materials Research Society 2003

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