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Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

  • W. -X. Ni (a1), A. Henry (a1), J. O. Ekberg (a1) and G. V. Hansson (a1)

Abstract

Silicon layers grown by molecular beam epitaxy, using both direct resistive heating and indirect radiant heating of the substrate, have been evaluated by photoluminescence measurements, diode I-V characterization, and chemical etching tests. The results show that large densities of defects could be introduced when resistively heated substrates were experiencing thermo-mechanical stress. Films with good crystal quality were grown using a carefully designed radiant type heater.

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Aspects of Crystal Quality of Si (100) Films Grown by Molecular Beam Epitaxy

  • W. -X. Ni (a1), A. Henry (a1), J. O. Ekberg (a1) and G. V. Hansson (a1)

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