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A-Si FETs With Improved On/Off Characteristics

Published online by Cambridge University Press:  25 February 2011

Yasutaka Uchida
Affiliation:
Takushoku University, Dept. of Electronic Engineering, Hachioji-shi, Tokyo 193, Japan
Masakiyo Matsumura
Affiliation:
Tokyo Institute of Technology, Dept. of Physical Electronics, Meguro-ku, Tokyo 152, Japan
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Abstract

This paper describes the experimental and theoretical results of Distributed Threshold Voltage FETs. Based on these results important advantages of DTV FET are clarify and a novel device structure has been proposed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

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References

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