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As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

  • R. Angelucci (a1), M. Merli (a1), S. Solmi (a1), A. Armigliato (a1), E. Gabilli (a1), D. Govoni (a1) and A. Poggi (a1)...

Abstract

Good quality p+/n and n+/p shallow junctions (< 0.15 um) with reverse current density of few nA/cm2 and low contact resistivity (∼ 5×10–7 Ω cm2) have been fabricated by using Mo suicide and Rapid Thermal Annealing (RTA). The processes of implantation through Mo films and into MoSi2 layers have been comparatively analysed on the basis of SIMS and carrier concentration profiles, TEM observations and DLTS measurements. In the case of n+/p diodes fabricated by ITM technology slightly worse leakage currents have been observed, in spite of the better planarity of the silicide-silicon interface exhibited by these structures.

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As and B Ion Implantation Through Mo and into Mo-Silicide Layers for Shallow Junction Formation

  • R. Angelucci (a1), M. Merli (a1), S. Solmi (a1), A. Armigliato (a1), E. Gabilli (a1), D. Govoni (a1) and A. Poggi (a1)...

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