Skip to main content Accessibility help
×
Home

Arsenic Deactivation in Silicon

  • M. A. Berding (a1) and A. Sher (a1)

Abstract

In this paper we examine the properties of arsenic in silicon, using ab initio calculations and a statistical theory. Good agreement is found between theory and experiment for the electronic concentration as a function of temperature and total arsenic concentration. We show that for low arsenic concentrations, full activation is the equilibrium condition. In equilibrium, the neutral complex composed of a lattice vacancy surrounded by four arsenic (VAs4) is the dominant means by which high concentrations of arsenic are rendered inactive. Under constrained equilibrium conditions in which VAs4 cluster formation is prohibited, we show that VAs3Si1 cluster populations increase dramatically and can account for nearly the same degree of compensation as the VAs4 clusters. Even VAs2 clusters alone can account for substantial deactivation in the absence of VAs3 and VAs4 clusters. These smaller complexes are essential not only to the establishment of equilibrium, since SiAs4 clusters are extremely rare, but can also explain some degree of deactivation, even if the formation of VAs4 clusters are kinetically inhibited.

Copyright

References

Hide All
1. Luning, S., Rousseau, R.M., Griffin, R.B., Carey, R.G. and Plummer, J.D., Tech. Dig. of the International Elec. Dev. Meet., p. 457 (1992).
2. Subrahmanyan, R., Orlowski, M. and Huffman, G., J. Appl. Phys. 71, p. 164 (1992).
3. Bauer, H., Pichler, P. and Ryssel, H., IEEE Trans, on Semi. Manu. 8, p. 414 (1995);
Bauer, H., Pichler, P. and Ryssel, H., Proc. 24th Euro. Solid State Dev. Res. Conf., p. 93 (1994);
Parisini, A., Bourret, A., Armigliato, A., Servidori, M., Solmi, S., Fabbri, R., Regnard, J.R. and Alain, J.L., J. Appl. Phys. 67, p. 2320 (1990).
4. Pandey, K.C., Erbil, A., Cargill, G.S., Boehme, R.F. and Vanderbilt, D., Phys. Rev. Lett. 61, p. 1282 (1988).
5. Allain, J.L., Regnard, J. R., Bourret, A., Parisini, A., Armigliato, A., Tourillon, G. and Pizzini, S., Phys. Rev. B 46, p. 9434 (1992);
Erbil, A., Cargill, G.S. III and Boehme, R.F., Mat. Res. Soc. 41, p. 275 (1985);
Erbil, A., Weber, W., Cargill, G.S. III and Boehme, R.F., Phys. Rev. B 34, p. 1392 (1986).
6. Rousseau, P.M., Griffin, P.B. and Plummer, J.D., Appl. Phys. Lett. 65, p. 578 (1994).
7. Lawther, D.W., Myler, U., Simpson, P.J., Rousseau, P.M., Griffin, P.B. and Plummer, J.D., Appl. Phys. Lett. 67, p. 3575 (1995).
8. Myler, U., Simpson, P.J., Lawther, D.W. and Rousseau, P.M., J. Vac. Sci. Tech. B 15, p. 757 (1997).
9. Wiehert, Th. and Swanson, M.L., J. Appl. Phys. 66, p. 3026 (1989).
10. Ramamoorthy, M. and Pantelides, S.T., Phys. Rev. Lett. 76, p. 4753 (1996).
11. Rousseau, P.M., Griffin, P.B., Carey, P.G. and Plummer, J.D., in Process Physics and Modeling in Semiconductor Technology, Electrochemical Society Proceedings, edited by Srinivasan, G. R., Taniguchi, K., and Murthy, C. S., vol. 93, p. 130 (The Electrochemical Society, Pennington NJ, 1993).
12. Nobili, D., Solmi, S., Parisini, A., Derdour, M., Armigliato, A. and Moro, L., J. Electrochem. Soc. 130, p. 922 (1983).
13. Angelucci, R., Celotti, G., Nobili, D. and Solmi, S., J. Electrochem. Soc 132, p. 2727 (1985);
Armigliato, A., Nobili, D., Solmi, S., Bourret, A. and Werner, P., J. Electrochem. Soc. 133, p. 2560 (1986).
14. Sher, A., van Schilfgaarde, M., Chen, A.-B. and Chen, W., Phys. Rev. B 36, p. 4279 (1987).
15. Berding, M. A., Sher, A., van Schilfgaarde, M., Rousseau, P. M., and Spicer, W. E., Appl. Phys. Lett. 72, 1492 (1998);
Berding, M.A. and Sher, A., (submitted to Phys. Rev. B).
16. Heavily doped regions are often produced by ion implantation and a laser-melt anneal after which the arsenic is nearly fully activated. SIMS measurements indicate that the arsenic stays in the lattice during subsequent processing (which we are attempting to model) in which the deactivation takes place.
17. Andersen, O.K., Jepsen, O. and Glotzel, D., Highlights of Condensed Matter Theory, edited by Bassani, F. et al. (Amsterdam, The Netherlands: North Holland, 1985), p. 59.;
Methfessel, M. and van Schilfgaarde, M., 1996 (unpublished).
18. von Barth, U. and Hedin, L., J. Phys. C5, p. 1629 (1972).
19. Landolt-Bornstein, , Vol. 17a.
20. Lietoila, A., Gibbons, J.F. and Sigmon, T.W., Appl. Phys. Lett. 36, p. 765 (1980).

Arsenic Deactivation in Silicon

  • M. A. Berding (a1) and A. Sher (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed