Skip to main content Accessibility help
×
Home

Area-Selective Electroless Deposition of Gold Nanostructures on SiC Using Focused-Ion-Beam Preprocessing

  • Hiroki Itasaka (a1), Masayuki Nishi (a1), Masahiro Shimizu (a1) and Kazuyuki Hirao (a1)

Abstract

Area-selective electroless deposition of gold nanostructures on a 6H-SiC substrate is demonstrated. Gold nanostructures selectively grow on a focused ion beam (FIB)-irradiated area on the 6H-SiC substrate when the substrate is exposed to a pure HAuCl4 aqueous solution. The nucleation of gold was more favorable on the Si face than on the C face. Quantitative evaluation of the amount of gold grown both on SiC and silicon is conducted to discuss the growth of gold, where silicon is a substrate we used in our previous study on this method. We reveal the mechanism of the growth of gold nanostructures as follows: Dangling bond defects formed in the FIB-irradiated area initiate the nucleation of gold by reducing Au ions in the solution at the surface. Once the SiC-gold or the silicon-gold boundary, which meets the Schottky contact condition, has formed, electrons in the non-FIB-irradiated region under/around the FIB-irradiated one also reduce Au ions on the gold surface through the boundary.

Copyright

Corresponding author

References

Hide All
1. Itasaka, H., Nishi, M., Shimotsuma, Y., Miura, K., Watanabe, M., Jain, H., and Hirao, K., J. Ceram. Soc. Jpn. 122, 543 (2014).
2. Itasaka, H., Nishi, M., and Hirao, K., Jpn. J. Appl. Phys. 53, 06JF06 (2014).
3. Kubo, N., Homma, T., Hondo, Y., and Osaka, T., Electrochim. Acta 51, 834 (2005).
4. Burton, J. C., Long, F. H., and Ferguson, I. T., J. Appl. Phys. 86, 2073 (1999).
5. Feng, Z.C., Lien, S.C., Zhao, J.H., Sun c, X.W., Lu, W., Thin Sol. Films 516, 5217 (2008).
6. Chaâbane, N., Debelle, A., Sattonnay, G., Trocellier, P., Serruys, Y., Thomé, L., Zhang, Y., Weber, W.J., Meis, C., Gosmain, L., and Boulle, A., Nucl. Instrum. Methods Phys. Rev. B 286, 108 (2012).
7. Matsuoka, T., Nishi, M., Shimotsuma, Y., Miura, K., and Hirao, K., J. Ceram. Soc. Jpn. 118, 575 (2010).
8. Sabisch, Magdalena, Krüger, Peter, and Pollmann, Johannes, Phys. Rev. B 55, 10 561 (1997).
9. Emtsev, K. V., Seyller, Th.,* and Ley, L., Broekman, L., Tadich, A., Riley, J. D., and Leckey, R. G. C., and Preuss, M., Phys. Rev. B 73, 075412 (2006).
10. Waldrop, J. R., Grant, R. W., Wang, Y. C., and Davis, R. F., J. Appl. Phys. 72, 4757 (1992).
11. Sze, S. M., Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., p. 850.
12. Porter, Lisa M., Davis, Robert F., Mater. Sci. Eng. B 34, 83 (1995).

Keywords

Area-Selective Electroless Deposition of Gold Nanostructures on SiC Using Focused-Ion-Beam Preprocessing

  • Hiroki Itasaka (a1), Masayuki Nishi (a1), Masahiro Shimizu (a1) and Kazuyuki Hirao (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed