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Application of Two-Step Deposition Method To Ultra-Thin a-Si FETs
Published online by Cambridge University Press: 28 February 2011
Abstract
Two-step deposition method for fabricating ultra-thin a-Si FETs has been investigated theoretically and experimentally. Theoretical relation between field-effect mobility and a-Si layer thickness agreed qualitatively with the experimental results. The mobility of the 15nm-thick FET was drastically improved by an application of the two-step deposition method.
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