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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

  • R. Brüggemann (a1), M. Rösch (a1), S. Tardon (a1) and G.H. Bauer (a1)

Abstract

We apply the publicly available device modeling tool SC-Simul for simulating experiments with user-defined heterojunction diodes to discuss the role of the electric field in solar cells. For amorphous silicon/crystalline silicon heterodiodes, the role of interface defects, an amorphous silicon buffer layer and low-cost crystalline silicon is studied by simulation of current-voltage characteristics and photoluminescence. Photoluminescence is sensitive to the minority carrier density in the volume of the device and can be used to monitor minority carrier properties in these diodes.

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Application of SC-Simul for Numerical Modeling of the Opto-Electronic Properties of Heterojunction Diodes

  • R. Brüggemann (a1), M. Rösch (a1), S. Tardon (a1) and G.H. Bauer (a1)

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