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Application of RTA To Bipolar Ic'S

Published online by Cambridge University Press:  28 February 2011

Robert H. Reuss  and
Thomas P. Bushey
Robert H. Reuss
Affiliation:
Motorola Semiconductor Products, 2200 W. Broadway Road, Mesa, Arizona 85202
Thomas P. Bushey
Affiliation:
Motorola Semiconductor Products, 2200 W. Broadway Road, Mesa, Arizona 85202
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Abstract

RTA has been investigated for a variety of applications including implant anneal and modification of poly silicon. However, little has been reported on the integration of RTA into actual process flows. We describe here results for bipolar IC's with RTA for the fabrication of shallower junctions and lower sheet resistance (Rs) poly electrodes. For a successful bipolar IC, not only are good diode characteristics and related transistor parameters important, but also, resistor behavior, uniformity, and yield are critical. An AG Heatpulse system was used to successfully anneal the emitter implant of 2.0 um design rule bipolar IC's. The yield and variation in gate delay were comparable to furnace annealed counterparts. These results are especially encouraging since both transistor performance and resistor matching are critical for the circuits tested. However, significant improvement in gate delay was not observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 221
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Sedgwick, T. O.,J. Electrochem. Soc., 130, 484 (1983)Google Scholar
2. Lunnon, M. E., Chen, J. T., Baker, J. E., J. Electrochem. Soc., 132, 2473 (1985)Google Scholar
3.a) Seidel, T. E., Knoell, R., Poll, G., Schwartz, B., Stevie, F. A., and Chu, P., J. AppI. Phys., 58, 683 (1985)Google Scholar
3b Wilson, S. R., Paulson, W. M., and Gregory, R. B., J. AppI. Phys., 55, 4162 (1984)Google Scholar
4. Wilson, S. R., Gregory, R. B., Paulson, W. M., Krause, J. J., Gressett, J. D., Handi, A. H., McDaniel, F. D., andDowning, R. G.,J. Electrochem. Soc., 132, 922 (1985)Google Scholar
5. Ko, W. C., Gwo, T. C., Yeung, P. H., and Radigan, S. J., Trans. Elec. Dev., ED-30, 236 (1983)Google Scholar
6. Sakai, T., Konaka, S., Yamamoto, Y., and Suzuki, M., in IEDM Tech. Dig., 1985, pp 18 21 Google Scholar
7.a) Fair, R. B., Wortman, J. J., and Liu, J., J. Electrochem. Soc., 131, 2387 (1984)Google Scholar
7b) Cho, K., Numan, M., Finstad, T. G., Chu, W. K., Liu, J., and Wortman, J. J., AppI. Phys. Lett., 47, 1321 (1985)Google Scholar
8. Takemura, H., Kamuja, T., Ohi, S., Sigiyama, M., Tashiro, T., and Nakamae, M., in IEDM Tech. Dig., 1986, pp 424 427.Google Scholar