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Application of Amorphous GaN for Electroluminescence Device

Published online by Cambridge University Press:  21 March 2011

Tohru Honda  and
Hideo Kawanishi
Tohru Honda
Affiliation:
Department of Electronic Engineering, Kohgakuin University 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
Hideo Kawanishi
Affiliation:
Department of Electronic Engineering, Kohgakuin University 2665-1 Nakano-machi, Hachiohji, Tokyo 192-0015, Japan
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Abstract

The vacuum evaporation of GaN thin films using GaN powder (5N) for GaN-based electroluminescence devices (ELDs) is reported. The crystal structures of the evaporated GaN layers were amorphous, which was confirmed from reflection high-energy electron diffraction (RHEED) patterns. Auger electron spectra revealed that the layers have excess Ga metal. Bluish-white light emission was observed from the GaN-based ELD under AC operation at RT. Although the emission intensity was weak, the electroluminescence spectra started from the band edge of h-GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.42.1
Copyright
Copyright © Materials Research Society 2002

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