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Anti-Site Bonds and the Structure of Interfaces in SiC

Published online by Cambridge University Press:  21 February 2011

P. Pirouz  and
J. Yang
P. Pirouz
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
J. Yang
Affiliation:
Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106, U.S.A.
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Abstract

High resolution electron microscopy has been used to study the structure of the 3C/6H interface, Σ,=3 {111}and Σ.=3 {112}grain boundaries in 3C-SiC. In SiC, as in other compound semiconductors, anti-site bonds occur in a variety of defects. These are high energy bonds comparable to that of dangling bonds. But, while dangling bonds at the grain boundaries may be eliminated by reconstruction just as in elemental semiconductors, it may not be possible to avoid anti-site bonds.These problems are discussed for the Σ=3 {112} grain boundary, where the structures proposed for Ge and Si are used as starting models for SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 173
Copyright
Copyright © Materials Research Society 1990

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