Skip to main content Accessibility help
×
Home

Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

  • A. Hughes (a1), T-H. Shen (a1) and C.C. Matthai (a1)

Abstract

The electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.

Copyright

References

Hide All
1. Hughes, A., Cafolla, A.A., Woolf, D.A. and Williams, R.H., presented at the 1991 I.O.P. Condensed Matter & Materials Physics Conference, Birmingham, U.K. (unpublished).
2. Olmstead, M.A., Bringans, R.D., Uhrberg, R.I.G. and Bachrach, R.Z., Phys. Rev. B 34 6041 (1986).
3. Abukawa, T., Park, C.Y. and Kono, S., Surf. Sci. 201 L513 (1988).
4. Woicik, J.C., Kendelewicz, T., Miyano, K.E., Bouldin, C.E., Pianetta, P.L. and Spicer, W.E., J. Vac. Sci. & Technol. A 9 1956 (1991); Phys. Rev. B 43 4331 (1991).
5. Woicik, J.C., Kendelewicz, T., Bouldin, C.E., Karlin, B.A., Pianetta, P. and Spicer, W.E., Phys. Rev. B 44 3475 (1991)
6. Rees, N.V. and Matthai, C.C., Semicond. Sci. Technol. 4 412 (1989).
7. Shen, T-H. and Matthai, C.C., J. Phys.: Condens. Matter 3 6169 (1991).
8. Bisi, O. and Calandra, C., J. Phys. C: Solid State Phys. 14 5476 (1981).
9. Kinoshita, T., Enta, Y., Ohta, H., Yaegashi, Y., Suzuki, S. and Kono, S., Surf. Sci. 204 405 (1988).

Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System

  • A. Hughes (a1), T-H. Shen (a1) and C.C. Matthai (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed