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Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System
Published online by Cambridge University Press: 25 February 2011
Abstract
The electronic density of states (DOS) for the Si(111) (√3×√3)-Sb system has been calculated using the tight binding method in the Extended Hiickel Approximation. We find that there is a gap of about 0.8eV between the valence band maximum (VBM) and a surface state. This is in contrast with the case of the unreconstructed (lxl) surface where the Fermi level lies at the surface state.
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- Copyright © Materials Research Society 1992