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Anomalous Hall Effect in Gd-implanted Wurtzite Al x Ga1-x N High Electron Mobility Transistor Structures

  • Fang-Yuh Lo (a1), Alexander Melnikov (a2), Dirk Reuter (a3), Yvon Cordier (a4) and Andreas D. Wieck (a5)...

Abstract

Al x Ga1- x N/GaN high electron mobility transistor (HEMT) structures grown by ammonia-source molecular beam epitaxy (MBE) are focused-ion-beam implanted with 300 keV Gd-ions at room temperature. The two-dimensional electron gas (2DEG) of these HEMT structures is located 27 nm underneath the sample surface. At 4.2 K, current-voltage characteristics across implanted rectangles show that the structures remain conducting up to a Gd-dose of 1×1012 cm-2. Anomalous Hall effect (AHE) is observed at T = 4.2 K for structures implanted with Gd, whose dose is 3×1011 cm-2. Measurements of AHE in the wide temperature range from 2.4 K to 300 K show that the magnetic ordering temperature of these structures is around 100 K. Therefore, these Gd-implanted HEMT structures containing the still conducting 2DEG, which is now embedded in a ferromagnetic semiconductor, open the possibility to polarize the electron spins.

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Anomalous Hall Effect in Gd-implanted Wurtzite Al x Ga1-x N High Electron Mobility Transistor Structures

  • Fang-Yuh Lo (a1), Alexander Melnikov (a2), Dirk Reuter (a3), Yvon Cordier (a4) and Andreas D. Wieck (a5)...

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