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Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

  • R. P. Webb (a1), M A Foad (a2), R M Gwilliam (a1), A P Knights (a1) and G. Thomas (a3)...

Abstract

Ultra low energy boron implants (0.2 to 3 keV) have been carried out on Si (100) at doses between 1×1014cm−2 and 1×1015cm−2 using xRLEAP. The samples were annealed at temperatures between 900°C and 1050°C. The atomic profiles of these samples was measured using SIMS. Monte Carlo and diffusion simulations were performed using the SSupreme code. Comparisons between the simulations and experimental measurements show interesting differences these are discussed.

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[2] Foad, M, England, J, Moffatt, S and Armour, D, “Analysis of sub-1 keV Implants in Silicon using SIMS, SRP, MEISS and DLTS: The xRLEAP Low Energy, High Current Implanter Evaluated”, Presented in the Ion Implantation Technology-96, Austin Tx June 1996.
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[6] Caturla, M J and Diaz de la Rubia, T, presented at MRS fall meeting, Dec.'96.
[7] Kaabi, L., Gontrand, C., Remaki, B., Seigneur, F., and Balland, B., “Analysis of low energy implants in silicon through Si02 films: implantation damage and anomalous diffusion.J. Microelectronics, vol 25, pp. 567576 1994.
[8] Prussin, S., and Zhang, P. F., “A physical model for the role of dose and the dose rate on amorphous depth generation”, Presented in the Ion Implantation Technology-96, Austin Tx June 1996.
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[10] Foad, M., Webb, R.P., Gwilliam, R.M., Knights, A.P. and Thomas, G., presented at the “Ultra Shallow Junctions Meeting, North Carolina, April 1997.
[11] VISTA Monte Carlo program curtosey of Alexander Burenkov
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[13] Webb, R.P., Appendix 3 in “Particle Beam Analysis” Vol 2, Eds. Seah, M. and Briggs, D., 1992
[14] Silvaco Athena Users Manual, Chapter 3, October 1996.

Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

  • R. P. Webb (a1), M A Foad (a2), R M Gwilliam (a1), A P Knights (a1) and G. Thomas (a3)...

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