Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-25T16:06:12.851Z Has data issue: false hasContentIssue false
  • English
  • Français

Annealing Time Dependence on 1.5μm Photoluminescence of Laser-Ablated β-FeSi2

Published online by Cambridge University Press:  01 February 2011

Shin-ichiro Uekusa ,
Kunitoshi Aoki ,
Mohammad Zakir Hossain ,
Tomohiro Fukuda  and
Noboru Miura
Shin-ichiro Uekusa
Affiliation:
uekusa@isc.meiji.ac.jp, Meiji University, School of Science and Technology, Japan
Kunitoshi Aoki
Affiliation:
kunitoshi45@yahoo.co.jp, Meiji University, School of Science and Technology, Japan
Mohammad Zakir Hossain
Affiliation:
zakihr76@yahoo.com, Meiji University, School of Science and Technology, Japan
Tomohiro Fukuda
Affiliation:
ee22081@isc.meiji.ac.jp, Meiji University, School of Science and Technology, Japan
Noboru Miura
Affiliation:
miura@isc.meiji.ac.jp, Meiji University, School of Science and Technology, Japan
Get access

Abstract

We prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

Keywords

laser ablationluminescenceoptoelectronic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE03-24
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bost, M.C. and Mahan, J. E.: J. Appl. Phys. 64(1988)2034.10.1063/1.341735Google Scholar
2. Diminriadis, C. A., Werner, J. H., Logothidis, S., Stuzmann, M., Weber, J. and Nesper, R.: J. Appl. Phys. 68(1990)1726.10.1063/1.346601Google Scholar
3. Lefki, K., Muret, P., Cherif, N. and Cinti, R. C.: J. Appl. Phys. 69(1991)325.10.1063/1.347720Google Scholar
4. Leong, D., Harry, M., Reeson, K. J. and Homewood, K. P.: Nature 387(1997)686.10.1038/42667Google Scholar
5. Powalla, M. and Herz, K.: Appl. Surf. Sci. 65/66(1993)482.10.1016/0169-4332(93)90706-HGoogle Scholar
6. grob, E., Riffel, M. and Stonrer, U.: J. Mater. Res. 10(1995)34.10.1557/JMR.1995.0034Google Scholar
7. Schuller, B., Carius, R., lenk, S., Mantl, S.: Optical Materials 17(2001)121.10.1016/S0925-3467(01)00033-7Google Scholar
8. Spinella, C., Coffa, S., Bongiorno, C., Pannitteri, S.: Appl. Phys. Lett. 76(2000)173 10.1063/1.125693Google Scholar
9. Suemasu, T., Fujii, T., Iikura, Y., Takakura, K., Hasegawa, F.: Jpn. J. Appl. Phys. 37(1998)1513 10.1143/JJAP.37.L1513Google Scholar
10. Chu, S., Hirohada, T., Kan, H.: Jpn. J. Appl. Phys. 41(2002)299 10.1143/JJAP.41.L299Google Scholar