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Annealing Studies on Low Energy As+ and As2 + Implants

  • Raghu Srinivasa (a1), Vikas Agarwal (a1), Jinning Liu (a2), Daniel F. Downey (a2) and Sanjay Banerjee (a1)...

Abstract

2 keV to 10 keV arsenic, As+, and arsenic dimer ions, As 2 +, were implanted into silicon at a dose of le15 cm-2 and 3e 15 cm-2 at 0° and 7°' tilt angles. For bare wafers, a low concentration of oxygen is required to provide sufficient capping during anneal to minimize out-diffusion. In the presence of oxygen, enhanced diffusion occurs during the anneal, the extent of which is a function of the concentration of oxygen and the temperature of anneal. The oxidation enhanced diffusion (OED) is significant at anneal temperatures above 1050°C. The extent of OED is observed to be more significant for the samples with lower energy As+ implants. An alternative technique for minimizing OED, without much out-diffusion, is the use of higher energy, 5 keV implants through a screen oxide. For identical anneal conditions, 5 keV As+ implants through a 40 Å screen oxide offer junction depth and sheet resistance values equivalent to that of 2 keV implants into bare silicon. As the screen oxide is sufficient to cap the out-diffusion of dopants, a nitrogen ambient or a lower temperature could be employed to get shallower junctions without much degradation in the sheet resistance. Further reduction in junction depths can be achieved by using the As 2 + implants.

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1. Downey, D. F., Osburn, C. M., Marcus, S. D., Solid State Technology, p. 71, Dec 1997
2. Downey, D. F., Marcus, S. D., and Chow, J. W., “Optimization of RTP parameters to produce ultra-shallow, highly activated B+, BF2+and As+ Ion-Implanted junctions”, presented at TMS conference Feb 1998, to be published in J. of El. Mat., June/July 1998
3. Downey, D. F., Chow, J. W., Lerch, W., Niess, J., Marcus, S D, “The effects of small concentrations of oxygen in RTP annealing of low energy boron, BF2 and arsenic ion implants”, to be presented at this MRS Conference.
4. Downey, D. F., US patent pending application, “Methods for forming shallow junctions in semiconductor wafers using controlled, low level ambients during annealing”, 1998
5. Downey, D. F., Eddy, R., Mehta, S., Nuc. Inst. And Meth. In Physics Res., B74, p. 160, 1993

Annealing Studies on Low Energy As+ and As2 + Implants

  • Raghu Srinivasa (a1), Vikas Agarwal (a1), Jinning Liu (a2), Daniel F. Downey (a2) and Sanjay Banerjee (a1)...

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