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Annealing of some II-IV-V2 crystals in the vapor of volatile constituents

Published online by Cambridge University Press:  21 March 2011

Valeriy G. Voevodin ,
Olga V. Voevodina ,
Svetlana A. Bereznaya ,
Zoya V. Korotchenko ,
Nils C. Fernelius ,
Jonathan T. Goldstein  and
Melvin C. Ohmer
Valeriy G. Voevodin
Affiliation:
Revolution sq., 634050, Tomsk, Russia
Olga V. Voevodina
Affiliation:
Revolution sq., 634050, Tomsk, Russia
Svetlana A. Bereznaya
Affiliation:
Revolution sq., 634050, Tomsk, Russia
Zoya V. Korotchenko
Affiliation:
Revolution sq., 634050, Tomsk, Russia
Nils C. Fernelius
Affiliation:
Air Force Research Lab Wright-Patterson Air Force Base, Dayton Ohio, 45433-7707, USA
Jonathan T. Goldstein
Affiliation:
Air Force Research Lab Wright-Patterson Air Force Base, Dayton Ohio, 45433-7707, USA
Melvin C. Ohmer
Affiliation:
Air Force Research Lab Wright-Patterson Air Force Base, Dayton Ohio, 45433-7707, USA
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Abstract

Experiments on annealing of CdGeAs2-, CdSnAs2- and ZnGeP2-crystals in the vapor of volatile constituents were carried out. Conductivity and Hall effect measurements were performed to characterize the modification of electrical properties, caused by the interaction of the crystal with the gas phase during annealing. Literature data and the results of the present work are discussed based on the results of a quasi-chemical analysis. This yielded that the results of annealing depends essentially on both the conditions of the experiment and the initial imperfection of the crystal. The most probable native structural defects becoming apparent under the annealing were the following: for CdSnAs2 - SnCd, VAs; for CdGeAs2 - VAs, VCd, CdGe, GeCd; for CdSiAs2 - SiAs, VAs ; for CdSiP2 - VCd, VP; for ZnGeP2 - ZnGe, GeZn, VZn, VP; and for ZnSnP2- ZnSn, SnZn, VZn, VP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.28.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Goryunova, N.A., Mamaev, S., Prochukhan, V.D., Properties of CdSnAs2 semiconductor –an electronic analog of InAs, Dokl. Akad. Nauk SSSR (rus). 142, 623–6 (1962).Google Scholar
2. Prochuhan, V.D., Rud', Yu.V., Potential practical applications of II-IV-V2 semiconductors Fiz.Tech.Polorovedn (rus).12, 209 (1977)[Sov. Phys. Semiconductors 12 121 (1977)]Google Scholar
3. Halliburton, L.E. et al, Electron paramagnetic resonance of a native acceptor in as-grown ZnGeP2, Appl. Phys. Lett. 64, 1615 (1994).Google Scholar
4. Pandey, R., Ohmer, M.C., Gale, J.D., A theoretical study of native acceptors in CdGaAs2, J. Phys.: Condens. Matter. 10, 5525 (1998).Google Scholar
5. Zapol, P., Pandey, R., Ohmer, M., Gale, J., Atomistic calculations of defects in ZnGeP2, J. Appl. Phys. 79, 671 (1996).Google Scholar
6. Giles, N.C., Halliburton, L.E., Native defects in the Ternary Chalcopyrites, MRS Bulletin. 23(7), 37 (July, 1998).Google Scholar
7. Kroger, F.A..The chemistry of imperfect crystals (North-Holl. Publ. Co, Amsterdam, 1964).Google Scholar
8. Vul', S.P., Prochukhan, V.D., Shmartsev, Yu.V., Thermal defects in CdSnAs2, Dokl. Akad. Nauk SSSR, Tech. Phys. (rus). 204(5), 1094–6 (1972).Google Scholar
9. Bairamov, B.H., Yu.Rud’, V., Rud’, Yu.V., Properties of Dopants in ZnGeP2, CdGeAs2, Ag-GaS2, AgGaSe2, MRS Bulletin.23(7), 41 (July, 1998).Google Scholar
10. Dovletmuradov, Ch., Allanzarov, A., Prochukhan, V.D., Rud', Yu.V., Serginov, M., Effect of heat treatment on the electrical properties of p-CdGeAs2, Izv. Akad. Nauk Turkm. SSR. Ser. Fiz.-Tekh, Khim. i Geol. Nauk (rus) 3, 106–8 (1972).Google Scholar
11. Prochukhan, V.D., About the behavior of the components of a lattice of compounds A2B4C5 ;2, Some problems of chemistry and physics of multinary semiconductors: Materials of a symposium (rus). 40 (UzhGU, Uzhgorod, 1970).Google Scholar
12. Masagutova, R.V., Research on the influence of lattice defects on the properties of monocrystals ZnGeP2: Thesis of the cand. of chem. scien. (Leningrad, 1980).Google Scholar
13. Prochukhan, V.D., Averkieva, G.K., Effect of intrinsic lattice defects on the properties of compound AIIBivCv 2 , Teor. I Eksperim. Isslel. Slozhn. Poluprovodn. Soedinenii [ Theoretical and experimental research on multinary semiconductor compounds ](rus). 75–85 (Kishiniov, 1978).Google Scholar
14. Kesamanli, F.P., Rud', Yu.V., Wideband semiconductors A2B4C5 ;2 with a chalcopyrite structure. Ternary semiconductors and their application. 39 (Shtiintsa, Kishiniov, 1979).Google Scholar
15. Tychina, I.I., Intrinsic lattice defects in the phosphides A2B4C5 ;2. Ternary semiconductors and their application. 17 (Shtiintsa, Kishiniov, 1987).Google Scholar
16. Grigor'eva, V. S. Prochukhan, V. D., Rud', Yu. V., A.Yakovenko, A., Intrinsic donors in zinc germanium phosphide (ZnGeP2) crystals, Pis'ma Zh. Tekh. Fiz. 1(3), 130–2 (1975). [Sov. Tech. Phys. Lett. 1(2) 61 (1975)]Google Scholar
17. A.Grishchenko, G., Sakalas, A., Sodeika, A., G.Tregub, I., Inversion of the conductivity type in zinc germanium phosphide (ZnGeP2), Liet. Fiz. Rinkinys, 19(6), 797–801 (1979).Google Scholar
18. Mamedov, A., Serginov, M., Lattice defects in the crystals CdSiAs2. Ternary semiconductors and their application. 83 (Shtiintsa, Kishiniov, 1987).Google Scholar
19. Kradinova, L.V., Prochukhan, V.D., Radul, V.A., Effect of deviations from stoichiometry on the properties of ZnSnP2 semiconductor. Nekot. Vop. Khim. Fiz. Poluprov. Slozhn. Sostava [Some problems of chemistry and physics of multinary semiconductors: Materials of a symposium (rus)]. 110–3 (UzhGU, Uzhgorod, 1970).Google Scholar
20. Zapol, P., Pandey, R., Seel, M., Recio, J.M., Ohmer, M.C., Density functional study of the structure, thermodynamics and electronic properties of CdGeAs2, J. Phys.: Condens. Matter. 11, 4517 (1999).Google Scholar