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Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D2 18O Labelling

  • J. C. McCallum (a1), T. W. Simpson (a2), I. V. Mitchell (a2), J. Rankin (a3) and L. A. Boatner (a4)...

Abstract

We report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D2 18O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

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Annealing of Pb-Implanted SrTiO3 in The Presence of Water Vapour: A Study Using D2 18O Labelling

  • J. C. McCallum (a1), T. W. Simpson (a2), I. V. Mitchell (a2), J. Rankin (a3) and L. A. Boatner (a4)...

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