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Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique

Published online by Cambridge University Press:  15 February 2011

R. W. Moss ,
D. H. Lee ,
K. D. Vuong ,
J. Ryan ,
J. Fagan ,
R. A. Condrate  and
X. W. Wang
R. W. Moss
Affiliation:
Alfred University, Alfred, New York, 14802
D. H. Lee
Affiliation:
Alfred University, Alfred, New York, 14802
K. D. Vuong
Affiliation:
Alfred University, Alfred, New York, 14802
J. Ryan
Affiliation:
Alfred University, Alfred, New York, 14802
J. Fagan
Affiliation:
Alfred University, Alfred, New York, 14802
R. A. Condrate
Affiliation:
Alfred University, Alfred, New York, 14802
X. W. Wang
Affiliation:
Alfred University, Alfred, New York, 14802
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Abstract

Thin-films of indium-tin oxide (ITO) on soda-lime-silicate (SLS) glass were fabricated using an atmospheric RF plasma mist deposition process. Some of the films were deposited at substrate temperatures between 400 C and 500 C, and were subsequently annealed at 400 C and 530 C for 1 hour. Conductivity was improved due to post-annealing. Film thickness, particle size, film morphology and crystallite size were characterized. The structural changes on the glass and the ITO film were investigated by DRIFT spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 429
Copyright
Copyright © Materials Research Society 1996

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References

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