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Annealing Characteristics of Amorphous Silicon Alloy Solar Cells Irradiated with 1.00 MeV Protons *

  • Salman S. Abdulaziz (a1) and James R. Woodyard (a1)

Abstract

a-Si:H solar cells were irradiated with 1.00 MeV proton fluences in the range of 1.00E14 to 1.2 5E15 cm-2. Annealing of the short-circuit current density was studied at 0, 22, 50, 100 and 150 °C. Annealing times ranged from an hour to several days. The measurements confirmed that annealing occurs at O °C and the initial characteristics of the cells are restored by annealing at 200 °C. It is proposed that the degradation in the short-circuit current density with irradiation is due to carrier recombination through the fraction of D° states bounded by the guasi-Fermi energies. The time dependence of the rate of annealing in the short-circuit current density appears to be consistent with the interpretation that there is dispersive transport mechanism which leads to the annealing of the irradiation induced defects.

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This work was supoorted under NASA contract NAG 3–833 and the wayne state university Institute for manufacturing Research.

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