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Angle-Resolved XPS Studies of Interfacial Bonding States in Silicon oxynitrides Fabricated Using Different Thermal Methodologies

Published online by Cambridge University Press:  10 February 2011

Sanjit Singh Dang  and
Christos G. Takoudis
Sanjit Singh Dang
Affiliation:
Advanced Materials Research Laboratory, Department of Chemical Engineering, University of Illinois at Chicago, 810 South Clinton Street, Chicago, IL 60607 E-mail: sdangl@uic.edu
Christos G. Takoudis
Affiliation:
Advanced Materials Research Laboratory, Department of Chemical EngineeringUniversity of Illinois at Chicago, 810 South Clinton Street, Chicago, IL 60607 E-mail: takoudis@uic.edu
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Abstract

Silicon oxynitride films, fabricated by direct thermal growth and annealing in N2O or NO, were analyzed by Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS). It is seen that for the samples processed in N2O, N is bonded as Si3N4 only, irrespective of whether the fabrication was done on bare Si or on an oxide pre-grown in O2. But the films processed in NO depict additional bonding arrangements, namely, non-stoichiometric SiOxNy, (Si-)2-N-O, and Si-N(-O)2. These bonding states are found to be concentrated in a higher proportion above the oxynitride/substrate interface. Further, it is seen that annealing of a pre-grown oxide in NO for 30 min incorporates the same bonding states as by direct growth in NO for as long as 120 min. Also, a critical N concentration (between 1.9% and 2.3%) is required for the incorporation of the Si-N(-O)2 structure, observed at 400.7 eV. Besides enhancing the overall understanding of the progress of silicon oxynitridation process in N2O and NO, these findings can help significantly towards developing process-property relationships for incorporation of N with the desired bonding state(s) at specific positions within an oxynitride film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 586: Symposium M – Interfacial Engineering for Optimized Properties II , 1999 , 99
Copyright
Copyright © Materials Research Society 2000

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