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Analytical model of a-Si/c-Si Hit Solar Cell

Published online by Cambridge University Press:  10 February 2011

J. Furlan ,
P. Popović ,
F. Smole  and
M. Topič
J. Furlan
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana Tržaška 25, Ljubljana, Slovenia
P. Popović
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana Tržaška 25, Ljubljana, Slovenia
F. Smole
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana Tržaška 25, Ljubljana, Slovenia
M. Topič
Affiliation:
Faculty of Electrical Engineering, University of Ljubljana Tržaška 25, Ljubljana, Slovenia
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Abstract

Using suitable simplifying approximations inside the particular regions of a p-i a-Si/n c-Si heterojunction solar cell, the analytical expressions for the solar cell current-voltage characteristics are derived showing clearly the dominating first-order effects on solar cell performance. The derived closed form solutions indicate that in the useful forward voltage range the largest dark current component of this cell is the interface recombination current and that the main contribution to the photocurrent comes from the light generated holes in the c-Si substrate layer. The transfer of holes across the intrinsic layer and over the ΔEv barrier is strongly suppressed resulting in an attenuation of solar cell dark and photocurrent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 227
Copyright
Copyright © Materials Research Society 1996

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References

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