Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-08T19:12:29.167Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of the Amorphous Silicon Carbide/Crystalline Silicon Interface

Published online by Cambridge University Press:  25 February 2011

M. M. Rahman ,
T. Harjono ,
K. H. Lui ,
F. E. Pagaduan ,
H. Inokawa ,
C. Y. Yang  and
Dian Sugiarto
M. M. Rahman
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
T. Harjono
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
K. H. Lui
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
F. E. Pagaduan
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
H. Inokawa
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
C. Y. Yang
Affiliation:
Microelectronics Laboratory, Santa Clara University, Santa Clara, CA 95053
Dian Sugiarto
Affiliation:
Greyhawk Systems, Inc., Milpitas, CA 95035
Get access

Abstract

The performance and reliability of silicon-based hetero-structure devices depend critically on their interfacial characteristics. Here we present high-resolution TEM (HRTEM) results for the a-SiC:H/c-Si (100) interface, substrate doping, and interface electrical characteristics derived from an Al/undoped a-SiC:H/p-Si metal-insulator-semiconductor (MIS) structure. The HRTEM study reveals an interface with a maximum asperity of three atomic planes. The substrate dopant profile for depths less than an extrinsic Debye length from the interface is computed from an iterative fit to the C-V data. A density of interface traps (Dit) of 1011 eV−1cm−2 at midgap is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 213
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Sasaki, K., Furukawa, S., and Rahman, M. M., IEDM Tech. Dig., 294 (1985).Google Scholar
Amorphous Silicon Technoloqy-1989. edited by Madan, A., Thompson, M.J., Taylor, P. C., Hamakawa, Y., and LeComber, P.G., (Mater. Res. Soc. Proc. 149. Pittsburgh, PA 1989).Google Scholar
3. Baert, K., Symons, J., Vandervorst, W., Vanhellemont, J., Caymax, M., Poortmans, J., Nijs, J., and Mertens, R., Appl. Phys. Lett. 51, 1922 (1987).Google Scholar
4. Terman, L. M., Solid-State Electron. 5, 285 (1962).Google Scholar
5. Sze, S. M., Physics of Semiconductor Devices. 2nd ed. (John Wiley, New York, 1981), pp. 371–379.Google Scholar
6. Toyabe, T., Matsuo, H., Yamamoto, S., and Masuda, H., IEDM Tech. Dig., 699 (1989).Google Scholar
7. White, M. H. and Cricchi, J. R., IEEE Trans. Electron Devices ED–19, 1280 (1972).Google Scholar