Skip to main content Accessibility help

Analysis Of Sige Fet Device Structures On Silicon-on-sapphire Substrates by X-Ray Diffraction

  • P. M. Mooney (a1), J. O. Chu (a1), J. A. Ott (a1), J. L. Jordan-Sweet (a1), B. S. Meyerson (a1), W. B. Dubbelday (a2) (a3), I. Lagnado (a2) and K. L. Kavanagh (a3)...


Si/Si1-xGex, heterostructures on improved silicon-on-sapphire substrates were grown epitaxially by ultra-high vacuum chemical vapor deposition for application as p-channel field effect transistors. High-resolution triple-axis x-ray diffraction was used to analyze these structures quantitatively and to evaluate the effects of device fabrication processes on them. Out-;diffusion of Ge from the Si1-xGex, quantum well was observed after fabrication as was the change in thickness of the Si cap layer due to wafer cleaning and gate oxidation at 875 °C



Hide All
1. Houssaye, P.R. de la, Chang, C.E., Offord, B., Johnson, R., Asbeck, P.M., Garcia, G.A. and Lagnado, I., IEEE Electron Device Lett. 16, 289 (1995).
2. Verdonct-Vandebroek, S., Crabbe, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C. and Johnson, J.B., IEEE Trans. Elect. Devices 41, 90 (1994).
3. Mathew, S.J., Niu, G., Dubbelday, W.D., Cressler, J.D. Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S., and Lagnado, I., submitted to Electron Device Lett.
4. Mathew, S.J., Niu, G., Dubbelday, W.D., Cressler, J.D., Ott, J.A., Chu, J.O., Mooney, P.M., Kavanagh, K.L., Meyerson, B.S. and Lagnado, I., submitted to Electron Device Letters.
5. Fewster, P.F., Semicond. Sci. Technol. 8, 1915 (1993).
6. Mooney, P.M., Jordan-Sweet, J.L., Chu, J.O. and LeGoues, F.K., Appl. Phys. Lett. 66, 3642 (1995); P.M. Mooney, J.L. Jordan-Sweet, K. Ismail, J.O. Chu, R.M. Feenstra and F.K. Legoues, Appl. Phys. Lett. 67, 2373 (1995).
7. Meyerson, B.S., Appl. Phys. Lett. 48, 797 (1986).
8. Lau, S.S., Matteson, S., Mayer, J.W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T.,Appl. Phys. Lett. 34, 76 (1979).
9. Mooney, P.M., Jordan-Sweet, J.L., Stephenson, G.B., LeGoues, F.K. and Chu, J.O., Advances in X-Ray Analysis 38, 181 (1995).
10. Rocking Curve Analysis by Dynamical Simulation, Bede Scientific, Inc.
11. Mooney, P.M., Ott, J.A., Chu, J.O. and Jordan-Sweet, J.L., submitted to Appl. Phys. Lett.
12. Boucaud, P., Wu, L., Guedj, C., Julien, F.H., Sajnes, I., Campidelli, Y. and Garchery, L., J. Appl. Phys. 80, 1414 (1996).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed