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Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

Published online by Cambridge University Press:  10 February 2011

Petr G. Eliseev ,
Vladimir A. Smagley  and
Marek Osiński
Petr G. Eliseev
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131–6081
Vladimir A. Smagley
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131–6081
Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87131–6081
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Abstract

Threshold current density in GaN-based UV double-heterostructure lasers is predicted in the range of 2- 4 kA/cm2 using theoretical calculation of optimized heterostructure for various types of devices. Freecarrier (FC) and Coulomb-enhancement (CE) models are compared. Results are given for different combinations of effective masses. The minimum threshold current is not strongly influenced by the choice of effective masses. The FC model predicts lower than CE threshold in edge-emitting lasers, whereas the CE model predicts lower than EC threshold in thin VCSEL devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 421: Symposium D – Compound Semiconductor Electronics and Photonics , 1996 , 419
Copyright
Copyright © Materials Research Society 1996

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