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Analysis of Proton Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells

  • Shirou Kawakita (a1) (a2), Mitsuru Imaizumi (a1), Koichi Kibe (a1), Shinichi Yoda (a1) (a2), Takeshi Ohshima (a3), Hisayoshi Itoh (a3) and Masafumi Yamaguchi (a4)...

Abstract

We investigated radiation-induced defects in CIGS solar cells with a solar-cell simulator to analyze the spectral response of the irradiated cells. The damage constant of the minority-carrier diffusion length of the cells irradiated with 1 MeV protons was determined to be 3.5 ×10-5. This analysis led to the relation between the defect introduction rate and proton energy, and was obtained using the same method, as was the defect annealing rate. This result agreed well with that estimated from an analysis of changes in short-circuit current degradation.

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Analysis of Proton Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells

  • Shirou Kawakita (a1) (a2), Mitsuru Imaizumi (a1), Koichi Kibe (a1), Shinichi Yoda (a1) (a2), Takeshi Ohshima (a3), Hisayoshi Itoh (a3) and Masafumi Yamaguchi (a4)...

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