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Analysis of Post-Transit Photocurrent-Time Data by Application of Tikhonov Regularization

Published online by Cambridge University Press:  01 February 2011

Mariana J. Gueorguieva ,
Charlie Main  and
Steve Reynolds
Mariana J. Gueorguieva
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee, DD1 1HG, U.K.
Charlie Main
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee, DD1 1HG, U.K.
Steve Reynolds
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Bell Street, Dundee, DD1 1HG, U.K.
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Abstract

A novel method for analysing post-transit photocurrent-time data using Tikhonov regularization is presented. The multiple-trapping rate equations are solved exactly in the time domain, avoiding certain mathematical approximations and numerical inaccuracies associated with approaches based on Laplace or Fourier transformations. Photocurrent decays simulated from discrete levels and model density of states (DOS) distributions are used to assess performance and to compare accuracy and resolution with existing methods. The technique is also shown to be effective as a practical DOS spectroscopy by application to experimental post-transit decays obtained from an amorphous silicon pin diode.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A21.1
Copyright
Copyright © Materials Research Society 2002

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