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Analysis of Localized Small Defect in ULSIs

  • K. Fukumoto (a1), H. Maeda (a1), Y. Mashiko (a1), M. Sekine (a1) and H. Koyama (a1)...

Abstract

The current leakage generated in a localized area that creates a more serious problem to the ULSI devices was investigated. To clarify the origin of such a current leakage generated at a localized small area, an evaluation technique with a high spatial resolution, high sensitivity and a precise positioning is demanded. We have developed the planar point TEM(Transmission Electron Microscope) technique to enable the structure analysis of a localized small area in ULSI devices. Using this technique and AEM(Analytical Electron Microscope), we revealed one cause of current leakage at a small area in a memory device. It was found that one origin of such leakage is caused by heavy metal precipitation on the localized dislocation. The origin of this dislocation generation is a combination of effects from the crystalline damage during the formation of the oxide sidewall spacer by dry etching and the stresses from the oxide sidewall spacer and the field oxide.

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1. Onishi, S., Ayukawa, A., Tanaka, K., and Sakiyama, K., IRPS1990, 265
2. Onishi, S., Ayukawa, A., Tanaka, K., and Sakiyama, K., J. Electrochem. Soc., Vol.138, No.5, May 1991, 1439
3. Sweeney, J., Herr, N., Schani, P., Mauntel, R., Mendez, H., Fejes, P., and Parrilo, L. C. IEDM Tech. Dig., 1988, 230
4. Cerva, H., and Kusters, K.-H., J. Appl. Phys. 66(10), 15 November 1989, 4723
5. Cerva, H., and Bergholz, W., J.Electrochem. Soc., Vol.140, No.3, March 1993, 780
6. Jenkins, M. W., J. Electrochem. Soc., Vol.124, No.5, 1977, 757

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