Skip to main content Accessibility help
×
Home

Analysis of InP Passivated with Thiourea/Ammonia Solutions and Thin CdS Films

  • H. M. Dauplaise (a1), A. Davis (a1), K. Vaccaro (a1), W. D. Waters (a1), S. M. Spaziani (a1), E. A. Martin (a1) and J. P. Lorenzo (a1)...

Abstract

The use of thiourea/ammonia pre-treatments on (100) InP, followed by chemical bath deposition (CBD) of CdS thin films (∼ 30 Å), with low-temperature, low-pressure chemical vapor deposited SiO2 has been shown to produce metal-insulator-semiconductor (MIS) samples with near-ideal capacitance-voltage (C-V) response. Here, we report on x-ray photoelectron spectroscopy (XPS) analysis of the near-surface of InP following pre-treatment and CdS deposition. The pre-treatment was shown by XPS to form an indium sulfide layer and effectively remove native oxides from the InP surface. The subsequent deposition of CdS on a sulfur-passivated surface forms a stable layer which protects the substrate from oxidation during SiO2 chemical vapor deposition. MIS samples prepared using the pre-treatment without CdS deposition showed improved C- V response, while samples prepared with both the pre-treatment and CdS deposition showed a dramatic reduction in the density of interface states.

Copyright

References

Hide All
1 Iyer, R., Chang, R.R., Lile, D.L., Appl. Phys. Lett. 53, 134 (1988).
2 Kwok, R.W.M., Jin, G., So, B. K. L., Hui, K.C., Huang, L., Lau, W. M., Hsu, C. C., Landheer, D., J. Vac. Sci. Technol. A 13 (3), 652(1995).
3 Vaccaro, K., Dauplaise, H.M., Davis, A., Spaziani, S.M., Lorenzo, J.P., Appl. Phys. Lett. 67 (4), 527 (1995).
4 Dauplaise, H.M., Vaccaro, K., Davis, A., Ramseyer, G.O., Lorenzo, J. P., J. Appl. Phys. 80 (5), 2873 (1996).
5 Bennett, B.R., Lorenzo, J.P., Vaccaro, K., Davis, A., J. Electrochem. Soc. 134 (10), 2517 (1987).
6 R. Castagné and Vapaille, A., Surface Sci. 28, 157 (1971).
7 Chastain, J., Handbook of X-Ray Photoelectron Spectroscopy, Perkin-Elmer Corporation, (1992).
8 Lau, W.M., Kwok, R.W.M., Ingrey, S., Surface Science 271, 579 (1992).
9 Tao, Y., Yelon, A., Sacher, E., Lu, Z.H., Graham, M.J., Appl. Phys. Lett. 60 (21), 2669 (1992).
10 R. Ortega-Borges and Lincot, D., J. Electrochem. Soc. 240 (12), 3464 (1993).
11 NIST Standard Reference Database 20, N1STX-ray Photoelectron Spectroscopy Database, Version 1.0, compiled by CD. Wagner, U.S. Dept of Commerce, Gaithersburg, MD (1989).
12 Weimer, P., Proc. IRE 50, 1462 (1962).

Analysis of InP Passivated with Thiourea/Ammonia Solutions and Thin CdS Films

  • H. M. Dauplaise (a1), A. Davis (a1), K. Vaccaro (a1), W. D. Waters (a1), S. M. Spaziani (a1), E. A. Martin (a1) and J. P. Lorenzo (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed