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Analysis of growth rate of silicon nanowires

  • J. Kikkawa (a1), Y. Ohno (a1) and S. Takeda (a1)


We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365 °C and 495 °C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.



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Analysis of growth rate of silicon nanowires

  • J. Kikkawa (a1), Y. Ohno (a1) and S. Takeda (a1)


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