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Analysis of Geometrical and Microstructural Effects on Void Formation in Metallization: Observation and Modelling

Published online by Cambridge University Press:  15 February 2011

W. C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
A. Ghiti
Affiliation:
University of Newcastle, Department of Electrical and Electronic Engineering, Newcastle upon Tyne NEI 7RU, U.K.
K. S. Low
Affiliation:
University of Newcastle, Department of Electrical and Electronic Engineering, Newcastle upon Tyne NEI 7RU, U.K.
A. L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
A. G. O'Neill
Affiliation:
University of Newcastle, Department of Electrical and Electronic Engineering, Newcastle upon Tyne NEI 7RU, U.K.
J. F. Walker
Affiliation:
FEI Europe Limited, Cottenham, Cambridge CB4 4PS, U.K.
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Abstract

This paper reports the analysis of geometrical and microstructural effects on void formation in interconnects. Ion-beam machining is used to define segments for study at the cathode end of test lines. Scanning electron microscopy is used to observe damage development, focused ion beam microscopy to observe the corresponding grain structure. Finite-element calculations of self-consistent current density and temperature distributions in the conductor are used to predict damage locations both for a continuum material and for simulated grain structures. Cross-section changes in the line give temperature variations leading to divergences in atomic flux. Regions of high flux divergence are favoured for electromigration damage, but the precise sites of damage are determined by the grain structure, as shown both in the experiment and in the modelling.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

1. Gangulee, A. and D'Heurle, F. M., Thin Solid Film 25 (1975) 317.Google Scholar
2. Schwarzenberger, A. P. and Greer, A. L., in Electronic Packaging Materials Science, edited by Jaccodine, R., Jackson, K. A. and Sundahl, R. C., (Mater. Res. Soc. Proc. 108, 1988) pp. 327330.Google Scholar
3. Attardo, M. J. and Rosenberg, R., J. Appl. Phys. 41 (1970) 2381.Google Scholar
4. Shih, W.C., Ghiti, A., Low, K.S., Greer, A.L., O'Neill, A.G. and Walker, J.F., in this volume.Google Scholar
5. Shih, W. C. and Greer, A. L., in Materials Reliability in Microelectronics V, edited by Oates, A. S., Filter, W. F., Rosenberg, R., Gadepally, K., (Mater. Res. Soc. Proc. 391, 1995) pp. 391396.Google Scholar
6. Sanchez, J. E. Jr., Kraft, O. and Arzt, E., Appl. Phys. Lett. 61 (1992) 3121.Google Scholar
7. Trattles, J. T., O'Neill, A. G. and Mecrow, B., J. Appl. Phys. 75 (1994) 7799.Google Scholar
8. Rosenberg, R. and Berenbaum, L., Appl. Phys. Lett. 12 (1968) 201.Google Scholar