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Analysis of Crystal Nucleation and Growth in Amorphous Cobalt Disilicede.

Published online by Cambridge University Press:  15 February 2011

D. A. Smith ,
P. V. Evans  and
S. R. Koppikar
D. A. Smith
Affiliation:
Stevens Institute of Technology, Hoboken NJ 07030
P. V. Evans
Affiliation:
Alean Research Center, Banbury, Oxon, UK
S. R. Koppikar
Affiliation:
Stevens Institute of Technology, Hoboken NJ 07030
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Abstract

Extensive in situ investigations of the crystallization of amorphous cobalt disilicide have been conducted using a transmission electron microscope with a hot stage. Thermodynamic and kinetic parameters describing the heterogeneous transformation have been evaluated. The angle of contact betwen crystalline and amorphous material was determined from tilting experiments to be 76°. Nucleation rates in samples 40 nm thick were evaluated at various temperatures and compared with thermodynamic models to deduce an interfacial energy between amorphous and crystalline COSi2 (σca) of 121 mJ/m2 and an activation energy for crystallization of 1.27 eV. Johnson-Mehl-Avrami analysis of the observed continuous nucleation and steady state isotropie growth in 100 nm thick samples points to a gradual transition of the crystallization mode from 3-dimensional (n=4) to 2-dimensional (n=3) growth as might be expected. Comparison of the nucleation and growth rates in 40 nm and 100 nm thick samples demonstrated the influence of surfaces on crystallization phenomena in thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 271
Copyright
Copyright © Materials Research Society 1994

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References

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