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Analysis of Adhesion Strength of Interfaces Between Thin Films Using Molecular Dynamics Technique

Published online by Cambridge University Press:  10 February 2011

T. Iwasaki  and
H. Miura
T. Iwasaki
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd. 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
H. Miura
Affiliation:
Mechanical Engineering Research Laboratory, Hitachi, Ltd. 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
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Abstract

We have developed a molecular-dynamics technique for determining the adhesion strength of the interfaces between different materials. In this technique the extended Tersoff-type potential is applied to calculate the adhesive fracture energy defined as the difference between the total potential energy of the material-connected state and that of the material-separated state. The adhesion strength of metal/dielectric interfaces as well as metal/metal interfaces is discussed based on this fracture energy. We used this technique to determine the adhesion strength of the interfaces between ULSI-interconnect materials (Al and Cu) and diffusionbarrier materials (TiN and W). The calculated adhesive fracture energy shows that the adhesion strength increases in the order: Cu/TiN, Cu/W, Al/W, and Al/TiN. Because this result was confirmed by scratch testing on the film-laminated structure, this technique is considered to be effective for determining the adhesion strength.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 377
Copyright
Copyright © Materials Research Society 2000

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References

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