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Analysis and Optimization of Thin-Film Ferroelectric Phase Shifters

  • R. R. Romanofsky (a1), F. W. Van Keuls (a2), J. D. Warner (a1), C. H. Mueller (a1), S. A. Alterovitz (a1), F. A. Miranda (a1) and A. H. Qureshi (a3)...

Abstract

Microwave phase shifters have been fabricated from (YBa2Cu3 O7-δ or Au)/SrTiO3 and Au/BaxSr1−xTiO3 films on LaAlO3 and MgO substrates. These coupled microstrip devices rival the performance of their semiconductor counterparts at Ku- and K-band frequencies. Typical insertion loss for room temperature ferroelectric phase shifters at K-band is ≈5 dB. An experimental and theoretical investigation of these novel devices explains the role of the ferroelectric film in overall device performance. A roadmap to the development of a 3 dB insertion loss phase shifter that would enable a new type of phased array antenna is discussed.

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Analysis and Optimization of Thin-Film Ferroelectric Phase Shifters

  • R. R. Romanofsky (a1), F. W. Van Keuls (a2), J. D. Warner (a1), C. H. Mueller (a1), S. A. Alterovitz (a1), F. A. Miranda (a1) and A. H. Qureshi (a3)...

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