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Analysis and comparison of semiconductor materials processed at IR vs. UV laser wavelengths for DRAM yield enhancement applications

  • Andy E. Hooper (a1), Allen Kawasaki (a2), Paul Kirby (a3), Robert Hainsey (a4), Jeongho Bang (a5), Kyeongseon Shin (a5), Ki Sang Kang (a5) and Kungu Lee (a5)...

Abstract

This report demonstrates the effects of IR and UV laser energy on common semiconductor layer stack materials used for DRAM laser fuses. By moving from IR to UV wavelengths it is possible to significantly shrink the laser spot diameter from ∼1.6 μm to 0.8 μm. Effects and concerns for the absorption of UV energy by Si, SiO2, nitrides, and oxynitrides are also presented.

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1. Scarfone, L.M. and Chlipala, J.D., J. Mater. Res., 1, 368, (1986).
2. Ready, J. F., Smart, D., and Swenson, E. J., in Handbook of Laser Materials Processing, edited by Farson, D.F. and Ready, J. F. (Laser Institute of America / Magnolia Publishing Inc., Orlando, FL, 2001).
3. Sun, Y., Proc. IEEE, 90, 16271636 (2002).
4. Sun, Y., Ph.D. dissertation, Oregon Graduate Institute of Science and Technology, 1997.
5. Keeth, B. and Baker, R. J., DRAM Circuit Design: a Tutorial (IEEE Press, Piscataway, NJ 2001).
6. Duley, W. W., in UV Lasers: effects and applications in materials science, (Cambridge University Press, New York, NY, 1996).
7. Natoli, J-Y., Gallais, L., Bertussi, B., During, A., Commandré, M., Opt. Express, 11, 824829 (2003).

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