Skip to main content Accessibility help
×
Home

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

  • J. H. Zhao (a1), R. Lis (a1), D. Coblentz (a2) (a3), J. Illan (a1), S. McAfee (a1), T. Burke (a1) (a4), M. Weiner (a4), W. Buchwald (a1) (a4) and K. Jones (a4)...

Abstract

An MOCVD grown InP based optothyristor has been fabricated and tested for high power pulsed switching applications. To increase the power handling capability, the thyristor structure has a 250 μm thick Fe doped semi-insulating (SI) InP sandwiched between two pn junctions of a conventional thyristor. The turn-on of the thyristor is controlled by optical illumination on the SI-InP which creates a high concentration of electron and hole pairs. More than 1,100 V device hold-off voltage has been observed and over 66 A switched current has been realized with a di/dt rating of 1.38×1010 A/s. The switched current as a function of switch voltage and of optical illumination power has also been studied. Comparison with the switching characteristics of a bulk SI-InP photoconductive switch clearly indicates the advantage of this optothyristor in terms of power handling capability.

Copyright

References

Hide All
1. Bernstein, B. H. and Shannon, J. P., editors, 7th. IEEE Pulsed Power Conf., Monterey, CA, June 11–14-1989.
2. Special issue on the optical and electron-beam control semiconductor switches, IEEE Trans, on Electron Devices, ED-37, Dec. 1990.
3. Alferov, Zh. I., Efanov, V. M., Zadiranov, Yu. M., Kardo-Sysoev, A. F., Ko-rol'kov, V. I., Ponomarev, S. I., and Rozhkov, A. V., Sov. Tech. Phys. Lett. 12, 529 (1986).
4. Belyaeva, O. A., Vainshtein, S. N., Zhilyaev, Yu. V., Levinshtein, M. E., and Chelnokov, V. E., Sov. Tech. Phys. Lett. 12, 383 (1986).
5. Vainshtein, S. N., Zhilyaev, Yu. V., and Levinshtein, M. E., Sov. Phys. Tech. Phys. 31, 788 (1986).
6. Vainshtein, S. N., Zhilyaev, Yu. V., and Levinshtein, M. E., Sov. Phys. Semicond. 21, 7 (1987).
7. Zadiranov, Yu. M., Korol'kov, V. I., Nikitin, V. G., Ponomarev, S. I., and Rozhkov, A. V., Sov. Tech. Phys. 9 280 (1983)
8. Zadiranov, Yu. M., Korol'kov, V. I., Ponomarev, S. I., and Tsvilev, G. I., Sov. Phys. Tech. Phys. 32, 466 (1987).
9. Hur, J. H., Hadizad, P., Hummel, S. G., Dzurko, K. M., Dapkus, P. D., Fetterman, H. R., and Gundersen, M. A., IEEE Trans. Electron Devices, ED–37, 2520 (1990).
10. Zhao, J. H., Burke, T., Larson, D., Weiner, M., Chin, A., Ballingall, J. M., Yu, T.-Y., accepted for presentation in MRS Fall Meeting, Dec. 2–6, 1991, Boston, MA.

An Optically Gated InP Based Thyristor for High Power Pulsed Switching Applications

  • J. H. Zhao (a1), R. Lis (a1), D. Coblentz (a2) (a3), J. Illan (a1), S. McAfee (a1), T. Burke (a1) (a4), M. Weiner (a4), W. Buchwald (a1) (a4) and K. Jones (a4)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed