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An Investigation Into the Preparation, Properties, and Processing of SiC/AIN and Si3N4/AIN Solid Solutions from Organometallic Precursors.

  • Leonard V. Interrante (a1), Corinna L. Czekaj (a1), Micheal L.J. Hackney (a1), Gary A. Sigel (a1), Paul J. Schields (a2) and Glen A. Slack (a2)...

Abstract

Solid solutions of SiC and AIN have been prepared by the co-pyrolysis of polysilanes and organoaluminum amides. In the presence of ammonia. Si3N4 and AIN are formed. These materials are fully characterized by TEM, SAD, SEM, XRPD, and elemental analyses. The influence of reaction conditions, as well as precursor properties and reactivity, on the composition and morphology of these materials is addressed.

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13. X-ray diffraction was performed using either a Siemens d500 or Rigaku theta-theta diffractometer at General Electric. Elemental Analyses were provided by Multichem and Galbraith Analytical Laboratories. TEM and SAD analyses were carried out on a JE0L-100-X microscope. NMR studies were performed on a Varian XL-200 spectrometer.

An Investigation Into the Preparation, Properties, and Processing of SiC/AIN and Si3N4/AIN Solid Solutions from Organometallic Precursors.

  • Leonard V. Interrante (a1), Corinna L. Czekaj (a1), Micheal L.J. Hackney (a1), Gary A. Sigel (a1), Paul J. Schields (a2) and Glen A. Slack (a2)...

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